Poster Presentations

Posters can be allocated in the designated area during the conference from 12 pm on Monday, September 18th till 2 pm on Friday, September 22nd. Available space for the poster is 1 m wide and 1,2 m high. The poster presenters should be available at their posters from 6 pm till 8 pm on Thursday. September 21st. The presenters will be invited to make one minute presentation and are asked to provide one side. Presentations will take place at 6 pm on Thursday, September 21st.

For information about the poster session in Russian click here

• Maxim Aksenov, Institute of Laser Physics SB RAS, Novosibirsk, Russian Federation
  Сharacterization of Au/Ti/InAlAs Schottky barrier used in microwave photodiodes.
• Alexander Badin, Tomsk State University, Tomsk, Russian Federation
  Dielectric properties of essential oils at THz frequency range.
• Vitaly Bessonov, Tomsk State University, Tomsk, Russian Federation
  Angle and axial displacements of dielectric fiber in quasi-optical resonator transformer.
• Eliel Carvajal Quiroz, Instituto Politecnico Nacional, Ciudad de México, Mexico
  Modelling Fe-Mo Double Perovskite Nanowires for Spintronics Applications.
• Dasha Chernobrova, Tomsk State University, Томск, Russian Federation
  Еlectromagnetic properties of composites based on carbon nanostructures.
• Ivan Chsherbakov, Tomsk State University, Tomsk, Russian Federation
  The influence of electrical field distribution profile on amplitude spectrum shape and charge collection efficiency of GaAs:Cr X-ray radiation sensors.
• Miguel Cruz-Irisson, Instituto Politecnico Nacional, Ciudad de México, Mexico
  First principles study of the electronic and optical properties of InAs Nanowires.
• Evgeny Erofeev, Research & Production Company Micran, Tomsk, Russian Federation
  Enhancement mode AlGaN/GaN MISHEMT on Silicon for Energy Efficient Power Conversion.
• Alexey Erokhin, Siberian Federal University, Krasnoyarsk, Russian Federation
  Adaptive antenna array efficiency in the presence of mutual coupling.
• Yuliya Fedoseeva, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk, Russian Federation
  Effect of thermal deposition of lithium on mesoporous carbon.
• Irina Gendrina, Tomsk State University, Tomsk, Russian Federation
  THE STATISTICAL PROCESSING OF SIMULATION RESULTS IN VISION SYSTEMS THROUGH THE ATMOSPHERE..
• Andrei Gismatulin, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russian Federation
  Charge transport mechanism in tantalum oxide TaOx.
• Damir Islamov, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russian Federation
  Nonlinear full-coupled dynamic RRAM switching model.
• Damir Islamov, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russian Federation
  Trap Density Evolution in FRAM: from Wake-up to Fatigue.
• Shivam Kansara, Sardar Vallabhbhai National Institute of Technology, Surat, India
  STRAIN-INDUCED MODULATION OF 2D TRANSITION METALDICHALCOGENIDES HOMO AND HETEROSTRUCTURE: PREDICTIONFROM COMPUTATIONAL APPROACH.
• Irina Kolesnikova, Tomsk State University, Tomsk, Russian Federation
  Lux-ampere characteristics of a high-resistance GaAs:Cr.
• Victor Koroteev, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk, Russian Federation
  13C enriched halogenated carbon materials.
• Wen-Shuo Kuo, National Cheng Kung University, Tainan, Taiwan
  Multi-Photon Photodynamic Therapy and Imaging Probe with Graphene-based Materials.
• Sin-Hyung Lee, Seoul National University, Seoul, Korea, Republic of
  Molecular weight dependence of polymer active layer on electrochemical metallization memory.
• Anastassiya Lozinskaya, Tomsk State University, Tomsk, Russian Federation
  Charge Carrier Lifetime Determination in GaAs:Cr under Near-Surface Illumination.
• Alvaro Miranda, Instituto Politecnico Nacional, Coyoacan, Mexico
  Carbon monoxide sensing properties of Ga, Al, B-doped Si nanowires.
• Oleg Morozov, Kazan National Research Technical University (KAI), Kazan, Russian Federation
  Instantaneous Frequency Measurement of Microwave Signals Using Frequency-Amplitude Transformation in Fiber Bragg Grating and Method of Additional Frequency Spacing.
• Sergey Nikonov, Siberian Physical-Technical Institute, Tomsk, Russian Federation
  Molecular layer epitaxy method. Formation of a monomolecular NTCDI layer on quartz substrates.
• Alexandra Pavlova, Tomsk State University, Tomsk, Russian Federation
  Electromagneic properties of composites based on hexaferrites and MCNT at microwaves.
• Timofey Perevalov, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russian Federation
  Electronic structure of oxygen deficient nonstoichiometric tantalum oxide.
• Felipe Perez Rodriguez, Benemerita Universidad Autonoma de Puebla, Puebla, Mexico
  Magnetic response of Fe and Ni nanoparticles embedded in artificial SiO2 opals.
• Mikhail Petrushkov, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russian Federation
  Improvement of GaAs/Si epitaxial films optical properties by means of low-temperature GaAs intermediate layers.
• Vladimir Popov, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russian Federation
  Positive charge compensation with interface HfO2 layer in SOS structures formed by silicon layer transfer on c-sapphire.
• Arturo Rodriguez-Gomez, National Autonomous University of Mexico (UNAM), Ciudad Universitaria CP 04510 Mexico Mexico, Mexico
  The auto-formation of silicon quantum dots embedded in a silicon nitride matrix on the surface of different substrates.
• Fernando Salazar, Instituto Politecnico Nacional, Ciudad de México, Mexico
  Lithium effects on the mechanical and electronic properties of germanium nanowires.
• Lubov Samsonova, Tomsk State University, Tomsk, Russian Federation
  Photo- and Electroluminescence of New Organic Semiconducters.
• Anna Scheglova, Tomsk State University, Tomsk, Russian Federation
  Dielectric properties of forest understory.
• Sergii Sergiienko, National University of Science and Technology MISiS, Moscow, Russian Federation
  Hot spots contribution to overall SERS signal for SERS active dimers and trimers on various substrates.
• Janki Shah, Sardar Vallabhbhai National Institute of Technology, Surat, India
  BAND GAP TUNING OF ALUMINA BY SURFACE ADSORPTION OF p-GROUP ELEMENTS: A DFT STUDY.
• Leila Shaimerdenova, Tomsk State University, Tomsk, Russian Federation
  The study of ion-implanted structures based on chromium compensated gallium arsenide.
• Vladimir Shelkovnikov, Novosibirsk Institute of Organic Chemistry, Novosibirsk, Russian Federation
  Nonlinear Optical Chromophores with Original Acceptor and Donor Blocks.
• Maria Sineva, National University of Science and Technology MISiS, Moscow, Russian Federation
  Simulation of a silicon 3D betavoltaic element with two-sided transformation performance.
• Tatiana Smirnova, Tomsk State University, Tomsk, Russian Federation
  Development of photoconductive semiconductor switches based on GaAs doped with Cr and Fe.
• Ivan Tarasov, Kirensky Institute of Physics, Krasnoyarsk, Russian Federation
  Effects of Lattice Defects on Electronic Structure and Optical Properties of Higher Manganese Silicide Mn4Si7 and Mn17Si30 Thin Films.
• Evgenii Telminov, Tomsk State University, Tomsk, Russian Federation
  The creation of organic injection laser – problems and achievements.
• Alejandro Trejo, Instituto Politecnico Nacional, Coyoacan, Mexico
  DFT study on the optical and vibrational properties of 3C porous Silicon Carbide.
• Ivan Trushnikov, Tomsk State University of Control Systems and Radioelectronics, Tomsk, Russian Federation
  Optical induction of phase diffraction structures by laser beams with bessel-like profiles in photorefractive Lithium Niobate.
• Vladimir Tsukanov, Tomsk State University, Tomsk, Russian Federation
  Temperature dependencies of current-voltage characteristics of GaAs:Cr sensors with different types of contacts.
• Alexander Voitsekhovskii, Tomsk State University, Tomsk, Russian Federation
  Electrical Properties of MIS Structures Based on n(p)-HgCdTe with Quantum Wells.
• Konstantin Zhuravlev, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russian Federation
  High quality molecular-beam epitaxy InAlAs for UHF photodiodes.

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