Approved Abstracts

• Dominic Gervasio, University of Arizona, Tucson, United States
  Chemical processing in molten salts.
• Janki Shah, Sardar Vallabhbhai National Institute of Technology, Surat, India
  BAND GAP TUNING OF ALUMINA BY SURFACE ADSORPTION OF p-GROUP ELEMENTS: A DFT STUDY.
• Shivam Kansara, Sardar Vallabhbhai National Institute of Technology, Surat, India
  STRAIN-INDUCED MODULATION OF 2D TRANSITION METALDICHALCOGENIDES HOMO AND HETEROSTRUCTURE: PREDICTIONFROM COMPUTATIONAL APPROACH.
• Victor Tugushev, National Research Center «Kurchatov Institute», Moscow, Russian Federation
  Anomalous Hall conductivity in 3D magnetic topological insulator based nanostructures.
• Fernando Salazar, Instituto Politecnico Nacional, Ciudad de México, Mexico
  Lithium effects on the mechanical and electronic properties of germanium nanowires.
• Dzmitry Bychanok, Research Institute for Nuclear Problems, Minsk, Belarus
  Design of carbon nanotube-based broadband radar absorber for Ka-band frequency range.
• Luca Larcher, University of Modena and Reggio Emilia, Reggio Emilia, Italy
  Multiscale Modeling of Memristor Devices for Novel Memory and Logic Architectures.
• Alexander Plekhanov, Institute of Automation and Electrometry of SB RAS, Novosibirsk, Russian Federation
  Compact planar electro-optical modulators based on poled chromophore-doped polyimides.
• Kodo Kawase, Nagoya University, Nagoya, Japan
  THz spectroscopic imaging using optical parametric generator.
• Alexei Popov, Institute of Terrestrial Magnetism, Moscow, Russian Federation
  Parametric Resonance and Theory of Bragg Waveguides.
• Tina Tse Nga Ng, University of California San Diego, San Diego, United States
  Printed Electronics for Sensing.
• Geliia Karlova, Tomsk State University of Control Systems and Radioelectronics, Tomsk, Russian Federation
  The Development of Phased Array Antenna Element for Active Magnetic Positioning System Based on Semiconductor Hall-Effect Sensors.
• Vitaly Bessonov, Tomsk State University, Tomsk, Russian Federation
  Angle and axial displacements of dielectric fiber in quasi-optical resonator transformer.
• Evgeny Erofeev, Research & Production Company Micran, Tomsk, Russian Federation
  Enhancement mode AlGaN/GaN MISHEMT on Silicon for Energy Efficient Power Conversion.
• Maria Sineva, National University of Science and Technology MISiS, Moscow, Russian Federation
  Simulation of a silicon 3D betavoltaic element with two-sided transformation performance.
• Wen-Shuo Kuo, National Cheng Kung University, Tainan, Taiwan
  Multi-Photon Photodynamic Therapy and Imaging Probe with Graphene-based Materials.
• Kirill Lozovoy, Tomsk State University, Tomsk, Russian Federation
  Comparative analysis of germanium quantum dots growth on Si(100), Si(111) and Sn/Si(100) surfaces.
• Satoshi Kera, Institute for Molecular Science, Myodaiji, Japan
  Tracking charge transport of organic semiconductor material by electronic structure measurement.
• Koichi Yamashita, University of Tokyo, Tokyo, Japan
  Theoretical Study on Energy Conversion Processes of Perovskite Solar Cells.
• Vladimir Pavelyev, Samara University, Samara, Russian Federation
  Silicon Diffractive Optics for THz Laser Radiation.
• Vyacheslav Timofeev, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russian Federation
  Morphology, structure and optical properties of semiconductor films with GeSiSn nanoislands and strained layers.
• Steffen Duhm, Soochow University, Suzhou, China
  Vertical Adsorption Distances Impact Energetics at Organic-Metal Interfaces.
• Alexander Kvashnin, Skolkovo Institute of Science and Technology, Moscow, Russian Federation
  Computational materials discovery in various dimensionalities.
• Alexey Kovalgin, University of Twente, Enschede, Netherlands
  Hotwire-assisted Atomic Layer Deposition of Pure Metals and Metal Nitrides.
• Oana Jurchescu, Wake Forest University, Winston-Salem, United States
  Charge transport in hybrid perovskite field-effect transistors.
• Vladimir Gritsenko, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russian Federation
  The charge transport mechanism and the nature of traps in charge trap flash, ReRAM and FeRAM devicesThe charge transport mechanism and the nature of traps in charge trap flash, ReRAM and FeRAM devices.
• Tatiana Smirnova, Tomsk State University, Tomsk, Russian Federation
  Development of photoconductive semiconductor switches based on GaAs doped with Cr and Fe.
• Stanislav Zhelnio, ITMO University, St Peterburg, Russian Federation
  Introduction into SoC: Building an FPGA-based System by Integration of MIPSfpga Processor Core with Memory and Peripheral Devices Using AHB-Lite Bus.
• Bjorn Lussem, Kent State University, Kent, United States
  Minority and Majority Currents in Organic Field-Effect Transistors.
• Sergey Maksimenko, Belarusian State University, Minsk, Belarus
  Propagation and Generation of Electromagnetic Waves in Carbon Nanotubes and Graphene.
• Ivan Trushnikov, Tomsk State University of Control Systems and Radioelectronics, Tomsk, Russian Federation
  Optical induction of phase diffraction structures by laser beams with bessel-like profiles in photorefractive Lithium Niobate.
• Anastasiya Kachusova, Tomsk State University, Tomsk, Russian Federation
  A Comparison of the Results of Measuring Permittivity Achievable with Coaxial and Cavity Perturbation Methods.
• Hiroaki Benten, Nara Institute of Science and Technology, Nara, Japan
  Nanoscale Mapping of Charge Transport Properties of Conjugated Polymer Films by Conducting Atomic Force Microscopy.
• Igor Filikhin, North Carolina Central University, Durham, United States
  Trions in TMDC Monolayers: Faddeev equations and Hyperspherical Harmonics Approaches.
• Timofey Perevalov, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russian Federation
  Electronic structure of oxygen deficient nonstoichiometric tantalum oxide.
• Joerg Debus, Technical University of Dortmund, Dortmund, Germany
  Magneto-optical effects of nitrogen vacancy centers in diamond crystals.
• Flavio Araujo, Unite Mixte de Physique CNRS/Thales, Corbais, Belgium
  Dynamical Neuromorphic Computing with Nanoscale Magnetic Oscillators.
• Elena Semouchkina, Michigan Technological University, Houghton, United States
  From Microwaves to Optics: All-Dielectric Solutions for Coordinate Transformation-Based Devices.
• Charles Dancak, University of California Santa Cruz Extension in Silicon Valley, Palo Alto, United States
  Nanometer ASIC Seminar.
• Vladimir Tsukanov, Tomsk State University, Tomsk, Russian Federation
  Temperature dependencies of current-voltage characteristics of GaAs:Cr sensors with different types of contacts.
• Damir Islamov, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russian Federation
  Influence of ALD Synthesis Conditions on the Trap Density in Thin Films of Hafnium Oxide.
• Ivan Chsherbakov, Tomsk State University, Tomsk, Russian Federation
  The influence of electrical field distribution profile on amplitude spectrum shape and charge collection efficiency of GaAs:Cr X-ray radiation sensors.
• Anastassiya Lozinskaya, Tomsk State University, Tomsk, Russian Federation
  Charge Carrier Lifetime Determination in GaAs:Cr under Near-Surface Illumination.
• Alexander Badin, Tomsk State University, Tomsk, Russian Federation
  Dielectric properties of essential oils at THz frequency range.
• Felipe Perez Rodriguez, Benemerita Universidad Autonoma de Puebla, Puebla, Mexico
  Magnetic response of Fe and Ni nanoparticles embedded in artificial SiO2 opals.
• Damir Islamov, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russian Federation
  Trap Density Evolution in FRAM: from Wake-up to Fatigue.
• Damir Islamov, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russian Federation
  Nonlinear full-coupled dynamic RRAM switching model.
• Yakov Roizin, TowerJazz Co., Migdal HaEmek, Israel
  Nonvolatile memories for IoT applications.
• Ilya Kudryavtsev, Samara University, Samara, Russian Federation
  HDL Application for Digital Synthesis in FPGA.
• Ilya Kudryavtsev, Samara University, Samara, Russian Federation
  Teaching students FPGA, DSP and microcontrollers in Samara University.
• Konstantin Egorov, Moscow Institute of Physics and Technology, Lobnya, Russian Federation
  Plasma-Enhanced Atomic Layer Deposition of Oxygen Deficient TaOx Thin Films for Resistive Switching Memory Applications.
• Pavle Radovanovic, University of Waterloo, Waterloo, Canada
  Tuning Plasmon Resonance of In2O3 Nanocrystals Throughout Mid-Infrared: Dopant, Phase, and Electronic Structure Dependence.
• Maxim Aksenov, Institute of Laser Physics SB RAS, Novosibirsk, Russian Federation
  Сharacterization of Au/Ti/InAlAs Schottky barrier used in microwave photodiodes.
• Irina Kolesnikova, Tomsk State University, Tomsk, Russian Federation
  Lux-ampere characteristics of a high-resistance GaAs:Cr.
• Giacomo Giorgi, University of Perugia, Perugia, Italy
  Hybrid Organic-Inorganic Halide Perovskites: Dimensionality vs. Applicability. A Theoretical Standpoint.
• Fred Roozeboom, TNO Eindhoven & Eindhoven University of Technology, Eindhoven, Netherlands
  Atomic Layer Processing: basics, materials, processes and applications.
• Leila Shaimerdenova, Tomsk State University, Tomsk, Russian Federation
  The study of ion-implanted structures based on chromium compensated gallium arsenide.
• Artem Kabanov, Samara University, Samara, Russian Federation
  Methods for prediction of new perspective materials for the electrochemical systems of energy storage.
• Sergii Sergiienko, National University of Science and Technology MISiS, Moscow, Russian Federation
  Structure and transport properties of the spark plasma sintered barium cerate based proton conductor.
• Sergii Sergiienko, National University of Science and Technology MISiS, Moscow, Russian Federation
  Hot spots contribution to overall SERS signal for SERS active dimers and trimers on various substrates.
• David Gilmer, Nantero, Austin, United States
  Fundamentals of Oxide Resistive Random Access Memories (RRAM).
• David Gilmer, Nantero, Austin, United States
  NRAM; A Disruptive Carbon-Nanotube Resistance-Change Memory.
• Sergei Koveshnikov, Institute of Microelectronics Technology of RAS, Chernogolovka, Russian Federation
  Fundamental properties of cross-bar non-volatile RRAM elements and their integration for low energy system-on-chip applications.
• Francis Balestra, Grenoble Institute of Technology, Grenoble, France
  NanoCMOS and Tunnel FETs for the end of the Roadmap.
• Olga Sedelnikova, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk, Russian Federation
  Effect of Interlayer Coupling on Plasmonic Properties of Twisted Bilayer Graphene.
• Stephen Goodnick, Arizona State University, Tempe, United States
  Nonequilibrium Electron and Phonon Dynamics in Advanced Concept Solar Cells.
• Yoshiro Hirayama, Tohoku University, Sendai, Japan
  Nuclear Spin Related Measurements for Semiconductor Quantum Systems.
• Olga Maslova, Altai State University, Barnaul, Russian Federation
  Computer Simulation of Graphene-Molybdenum Nanosized Sensor of Carbon Monoxide Molecules.
• Alexander Shalumov, Research Institute ASONIKA, Kovrov, Russian Federation
  Computational Modeling of External Impact on Electronic Devices.
• Alvaro Miranda, Instituto Politecnico Nacional, Coyoacan, Mexico
  Carbon monoxide sensing properties of Ga, Al, B-doped Si nanowires.
• Stephen Goodnick, Arizona State University, Tempe, United States
  Nanotechnology Pathways to Next-Generation Photovoltaics.
• Alejandro Trejo, Instituto Politecnico Nacional, Coyoacan, Mexico
  DFT study on the optical and vibrational properties of 3C porous Silicon Carbide.
• Yutaka Ohno, Nagoya University, Nagoya, Japan
  Flexible bio-electronics based on carbon nanotube thin films.
• Axel Fischer, Dresden University of Technology, Dresden, Germany
  A Vertical Organic Transistor with Areal Current Densities in the kA/cm² Regime.
• Eliel Carvajal Quiroz, Instituto Politecnico Nacional, Ciudad de México, Mexico
  Modelling Fe-Mo Double Perovskite Nanowires for Spintronics Applications.
• Miguel Cruz-Irisson, Instituto Politecnico Nacional, Ciudad de México, Mexico
  First principles study of the electronic and optical properties of InAs Nanowires.
• Alexander Kamkin, Institute for System Programming of RAS, Moscow, Russian Federation
  A MicroTESK-based Test Program Generator for MIPS Microprocessors.
• Konstantin Zhuravlev, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russian Federation
  High quality molecular-beam epitaxy InAlAs for UHF photodiodes.
• Alexey Erokhin, Siberian Federal University, Krasnoyarsk, Russian Federation
  Adaptive antenna array efficiency in the presence of mutual coupling.
• Sergey Brazhnikov, Scientific-Manufacturing Complex, Zelenograd, Moscow, Russian Federation
  Master-slice Semicustom VLSI Design Flow by Means of “Kovcheg” CAD.
• Steponas Asmontas, Center for Physical Sciences and Technology, Vilnius, Lithuania
  PECULIARITIES OF PHOTOVOLTAGE FORMATION ACROSS SI AND GAAS P-N JUNCTION UNDER ILLUMINATION OF LASER RADIATION.
• Sergey Beznosyuk, Altai State University, Barnaul, Russian Federation
  Quantum Mechanical Approaches to Computer Simulation Graphene-Metal Nanosystems.
• Georgy Fedorov, Moscow Institute of Physics and Technology, Dolgoprudny, Russian Federation
  Graphene Based Nanostructures for Detecting Terahertz Radiation.
• Arturo Rodriguez-Gomez, National Autonomous University of Mexico (UNAM), Ciudad Universitaria CP 04510 Mexico Mexico, Mexico
  The auto-formation of silicon quantum dots embedded in a silicon nitride matrix on the surface of different substrates.
• Anton Moiseev, Roboclub DOSAAF, Nizhny Novgorod, Russian Federation
  Digital electronics for mathematicians and programmers.
• Rail Satarov, Tomsk State University, Tomsk, Russian Federation
  POSITIONING FOR PEOPLE BEHIND BARRIERS IN REAL TIME WITH SYSTEM «DOZOR-400».
• Vladimir Popov, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russian Federation
  Diamond-Graphite-Diamond Heterostructures Produced by Implantation and HPHT Annealing for Lift-off Transfer and New Devices.
• Roman Kezerashvili, City University of New York, Brooklyn, United States
  Superfluidity and Bose-Einstein Condensation in Two-dimensional Nanomaterials.
• Robert Nemanich, Arizona State University, Tempe, United States
  Defect Control in Diamond Epitaxy for High Temperature Electronics.
• Vladimir Popov, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russian Federation
  Positive charge compensation with interface HfO2 layer in SOS structures formed by silicon layer transfer on c-sapphire.
• Yuriy Gladush, Skolkovo Institute of Science and Technology, Moscow, Russian Federation
  Polymer-free Films of Single-walled Carbon Nanotubes as a Saturable Absorbers for Fiber Lasers.
• Alex Laikhtman, Holon Institute of Technology (HIT), Holon, Israel
  Tungsten Disulfide Nanoparticles as a Medium for Hydrogen Storage: Comparison of Hydrogenation Methods and Determination of Chemical Configuration.
• Sergey Makarov, Altai state University, Barnaul, Russian Federation
  Diamond-like Carbon Films.
• Igor Shvets, Tomsk State University, Tomsk, Russian Federation
  Intrinsic Spin Hall Response in Three-Dimensional Topological Insulator/Normal Insulator Heterostructures.
• Patrick Lenahan, Pennsylvania State University, University Park, United States
  Spin Dependent Variable Range Hopping and Spin Dependent Charge Pumping in Metal- Insulator- Semiconductor Systems.
• Vladimir Yurin, Tomsk State University, tomsk, Russian Federation
  Multiwave Laser Cutting of Thin Glasses.
• Mikhail Petrushkov, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russian Federation
  Improvement of GaAs/Si epitaxial films optical properties by means of low-temperature GaAs intermediate layers.
• William Petuskey, Arizona State University, Tempe, United States
  Accelerating Materials Innovation and Implementation: What Strategies can be Developed?.
• Vlad Burtman, University of Utah, Salt Lake City, United States
  Generalized Charge Transfer (GCT) Model for Analysis of Transport Phenomena in Molecular and DNA pistacks devices.
• Roman Malakhov, ZOOM, Tomsk, Russian Federation
  Distributed road traffic monitoring network.
• Vladimir Shelkovnikov, Novosibirsk Institute of Organic Chemistry, Novosibirsk, Russian Federation
  Nonlinear Optical Chromophores with Original Acceptor and Donor Blocks.
• Mikhail Petrushkov, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russian Federation
  Improvement of GaAs/Si epitaxial films optical properties by means of low-temperature GaAs intermediate layers.
• Oleg Morozov, Kazan National Research Technical University (KAI), Kazan, Russian Federation
  Instantaneous Frequency Measurement of Microwave Signals Using Frequency-Amplitude Transformation in Fiber Bragg Grating and Method of Additional Frequency Spacing.
• Irina Gendrina, Tomsk State University, Tomsk, Russian Federation
  THE STATISTICAL PROCESSING OF SIMULATION RESULTS IN VISION SYSTEMS THROUGH THE ATMOSPHERE..
• Alexandra Pavlova, Tomsk State University, Tomsk, Russian Federation
  Electromagneic properties of composites based on hexaferrites and MCNT at microwaves.
• Oleg Tolbanov, Tomsk State University, Tomsk, Russian Federation
  Electronics Properties of GaAs Crystals Containing Deep Nanoclusters.
• Lubov Samsonova, Tomsk State University, Tomsk, Russian Federation
  Photo- and Electroluminescence of New Organic Semiconducters.
• Lyubov Bulusheva, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk, Russian Federation
  Li-ion capacity of coupled graphene and molybdenum sulfide materials.
• Mikhail Baklanov, North China University of Technology, Boutersem, Belgium
  Interconect Challenges of ULSI Devices Beyond 10 nm Technology Nodes.
• Seunghyup Yoo, Korea Advanced Institute of Science and Technology, Daejeon, Afghanistan
  Flexible Organic Electronic Devices enabled by Vapor-Phase Deposition of Polymeric Insulators and Organic Semiconductors.
• Ken-ichi Ueda, University of Electro-Communications, Chofu, Japan
  Thermal-Lens-Free Heat Capacitive Active Mirror.
• Anna Scheglova, Tomsk State University, Tomsk, Russian Federation
  Dielectric properties of forest understory.
• Ruslan Gadirov, Siberian Physical-Technical Institute, Tomsk, Russian Federation
  Inkjet printing of organic materials and devices.
• Tatiana Kopylova, Tomsk State University, Tomsk, Russian Federation
  Molecular Layer Epitaxy Method for Molecular Nanoelectronics.
• Alexander Voitsekhovskii, Tomsk State University, Tomsk, Russian Federation
  Electrical Properties of MIS Structures Based on n(p)-HgCdTe with Quantum Wells.
• Vladimir Yakubov, Tomsk State University, Tomsk, Russian Federation
  Theory and Technology of Wave Vision.
• Sergey Nikonov, Siberian Physical-Technical Institute, Tomsk, Russian Federation
  Molecular layer epitaxy method. Formation of a monomolecular NTCDI layer on quartz substrates.
• Dasha Chernobrova, Tomsk State University, Томск, Russian Federation
  Еlectromagnetic properties of composites based on carbon nanostructures.
• Evgenii Telminov, Tomsk State University, Tomsk, Russian Federation
  The creation of organic injection laser – problems and achievements.
• Sin-Hyung Lee, Seoul National University, Seoul, Korea, Republic of
  Molecular weight dependence of polymer active layer on electrochemical metallization memory.
• Yuliya Fedoseeva, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk, Russian Federation
  Effect of thermal deposition of lithium on mesoporous carbon.
• Ivan Tarasov, Kirensky Institute of Physics, Krasnoyarsk, Russian Federation
  Effects of Lattice Defects on Electronic Structure and Optical Properties of Higher Manganese Silicide Mn4Si7 and Mn17Si30 Thin Films.
• Nikita Polyakov, Moscow Institute of Physics and Technology and Moscow Center of SPARC Technologies , Moscow, Russian Federation
  Teaching Students in Basics of Digital Device Design on FPGA in Moscow Institute of Physics and Technology.
• Vladimir Makukha, Novosibirsk State Technical University, Novosibirsk, Russian Federation
  Cluster Approach in Education — From Transistor to FPGA.
• Vladimiro Mujica, Arizona State University, Tempe, United States
  Quantum Confinement Effects in Nano-electronic Materials.
• Vladimiro Mujica, Arizona State University, Tempe, United States
  Chirality Effects in Molecular Electronics.
• Timour Paltashev, Advanced Micro Devices, Sunnyvale, United States
  AMD strategy in exascale supercomputing and Radeon Technology Group Global academic connections.
• Dominic Gervasio, University of Arizona, Tucson, United States
  Science and Technology Challenges in Solar Energy Generation and Energy Storage.
• Mikhail Mikhailov, Tomsk State University of Control Systems and Radioelectronics, Tomsk, Russian Federation
  Nanotechnology Application for Spacecraft Smart Coatings: Thermal Stabilizing Coating.
• Roman Kezerashvili, City University of New York, Brooklyn, United States
  Solar Sail Acceleration by Thermal Desorption and Temperature Restriction on Heliocentric Orbits.
• Mikhail Mikhailov, Tomsk State University of Control Systems and Radioelectronics, Tomsk, Russian Federation
  Nanotechnology Application for Spacecraft Coatings: Pigment and Binder Modification.
• Grigory Dunaevskiy, Tomsk State University, Tomsk, Russian Federation
  Quasi-optical Resonator for Precision Measurements and Non-Destructive Testing in Gigahertz and Terahertz Wavelength Ranges.
• Nikolay Evseev, Tomsk State University, Tomsk, Russian Federation
  Technology of High-purity Aluminum Nitride Production by Self-propagating High-temperature Synthesis.
• Robert Nemanich, Arizona State University, Tempe, United States
  Diamond: a Brilliant Wide Bandgap Semiconductor.
• Victor Koroteev, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk, Russian Federation
  13C enriched halogenated carbon materials.
• William Petuskey, Arizona State University, Tempe, United States
  Morphology, Low-Temperature Fabrication of nano-Ceramics with New Functionality.
• Albert Nasibulin, Skolkovo Institute of Science and Technology, Moscow, Russian Federation
  Single-walled Carbon Nanotubes: from Synthesis to Applications.
• Alexander Vorozhtsov, Tomsk State University, Tomsk, Russian Federation
  Nanoparticles for Applications in High Energy Materials and Light Alloys.
• Andrei Gismatulin, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russian Federation
  Charge transport mechanism in tantalum oxide TaOx.
• Oleg Tolbanov, Tomsk State University, Tomsk, Russian Federation
  Радиационно-стойкие структуры на основе компенсированного GaAs для электронной компонентной базы космического применения.
• Oleg Tolbanov, Tomsk State University, Tomsk, Russian Federation
  Compensated GaAs based radiation hard structures for electronic componential base of space application.

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